A Thermally-Stable Sub-0.9nm EOT TaSix/HfSiON Gate Stack with High Electron Mobility, Suitable for Gate-First Fabrication of hp45 LOP Devices

• INUMIYA S.

収録刊行物

• Proceedings of IEDM Tech. Digest, 2005

  Proceedings of IEDM Tech. Digest, 2005 2005

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• CRID: 1570009750474876800
• NII論文ID: 10018156842
• データソース種別:
  • CiNii Articles