Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition

• Guoqiang Li

• Jitsuo Ohta

• Koichiro Okamoto

書誌事項

タイトル別名

• Room Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed Laser Deposition

収録刊行物

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (17-19), L457-459, 2006-05

  Tokyo : Japan Society of Applied Physics

キーワード

• atomically flat surface
• pulsed laser deposition

詳細情報

• CRID: 1520854805352652160
• NII論文ID: 10018157388
• NII書誌ID: AA11906093
• ISSN: 00214922
• NDL書誌ID: 7926142
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7926142
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles