Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering

• Masanobu Yoshikawa

• Masataka Murakami

• Keiko Matsuda

Bibliographic Information

Other Title

• Stress Characterization of Si by a Scanning Near Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level using Resonant Raman Scattering

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (17-19), L486-489, 2006-05

  Tokyo : Japan Society of Applied Physics

Keywords

• silicon

Details

• CRID: 1520573330599297280
• NII Article ID: 10018157528
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 7926302
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7926302
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles