Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in situ Resistance Measurements
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The amorphous-to-crystal transition has been studied by in-situ resistance measurements for Ge2Sb2Te5 (GST) thin films doped with silicon (Si) or nitrogen (N). It was found that the electrical properties and thermal stability of GST films can be improved by doping small amount of Si in the GST film. In comparison with Si doping, the N doping effects have also been studied and it was revealed that both the Si- and N-doping can increase the electrical conduction activation energy and enhance thermal stability of amorphous GST.
- Jpn J Appl Phys
Jpn J Appl Phys 45(12), L349-L351, 2006-04-25
INSTITUTE OF PURE AND APPLIED PHYSICS