Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in situ Resistance Measurements

この論文にアクセスする

この論文をさがす

著者

    • Ling Yun Ling Yun
    • Department of Microelectronics, ASIC and System State Key Lab., Fudan University, Shanghai 200433, China
    • Lin Yinyin Lin Yinyin
    • Department of Microelectronics, ASIC and System State Key Lab., Fudan University, Shanghai 200433, China
    • Lai Yunfeng
    • Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University, Shanghai 200030, China
    • Feng Jie
    • Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University, Shanghai 200030, China
    • Tang Tingao
    • Department of Microelectronics, ASIC and System State Key Lab., Fudan University, Shanghai 200433, China
    • Cai Bingchu
    • Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University, Shanghai 200030, China
    • Chen Bomy
    • Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.

抄録

The amorphous-to-crystal transition has been studied by in-situ resistance measurements for Ge2Sb2Te5 (GST) thin films doped with silicon (Si) or nitrogen (N). It was found that the electrical properties and thermal stability of GST films can be improved by doping small amount of Si in the GST film. In comparison with Si doping, the N doping effects have also been studied and it was revealed that both the Si- and N-doping can increase the electrical conduction activation energy and enhance thermal stability of amorphous GST.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 45(12), L349-L351, 2006-04-25

    Japan Society of Applied Physics

参考文献:  19件中 1-19件 を表示

  • <no title>

    LAI S.

    IEDM Tech. Dig., 2003, 2003

    被引用文献1件

  • <no title>

    LAI S.

    IEDM Tech. Dig., 2001, 2001

    被引用文献1件

  • <no title>

    TYSON S.

    IEEE Aero. Conf. Proc. 5, 385, 2000

    被引用文献1件

  • <no title>

    MAIMON J.

    IEEE Aero. Conf. Proc. 5, 2289, 2001

    被引用文献1件

  • <no title>

    PIROVANO A.

    IEDM Tech. Dig., 2003, 2003

    被引用文献1件

  • <no title>

    HWANG Y. N.

    IEDM Tech. Dig., 2003, 2003

    被引用文献1件

  • <no title>

    KOH G. H.

    IEEE ICICDT, 2004, 2004

    被引用文献1件

  • <no title>

    HORII H.

    Dig. Tech. Pap. 2003 Symp. VLSI Technology, 2003

    被引用文献1件

  • <no title>

    LAI Y. F.

    J. Electron. Mater. 34, 176, 2005

    被引用文献1件

  • <no title>

    LING Y.

    ICSICT, 2004, 2004

    被引用文献1件

  • <no title>

    MOTT N. F.

    Electronic Processes in Non-Crystalline Material, 1979

    被引用文献1件

  • <no title>

    JEONG T. H.

    Jpn. J. Appl. Phys. 40, 1609, 2001

    被引用文献1件

  • <no title>

    JEONG T. H.

    Jpn. J. Appl. Phys. 39, 2775, 2000

    被引用文献1件

  • <no title>

    YAMADA N.

    MRS Bull 21, 48, 1996

    被引用文献1件

  • <no title>

    KIM S. M.

    Thin Solid Films 469, 322, 2004

    被引用文献1件

  • <no title>

    GU S.

    Chin. Opt. Lett. 1, 716, 2003

    被引用文献1件

  • <no title>

    KOJIMA R.

    Jpn. J. Appl. Phys. 40, 5930, 2001

    被引用文献1件

  • <no title>

    FRIEDRICH I.

    J. Appl. Phys. 87, 4130, 2000

    被引用文献4件

  • <no title>

    PRIVITERA S.

    J. Appl. Phys. 94, 4409, 2003

    DOI 被引用文献5件

各種コード

  • NII論文ID(NAID)
    10018157638
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7893584
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ