Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in situ Resistance Measurements

• Yun Ling

• Yinyin Lin

• Baowei Qiao

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (12-16), L349-351, 2006-04

  Tokyo : Japan Society of Applied Physics

Keywords

• activation energy
• electrical measurements

Details

• CRID: 1520010380597234688
• NII Article ID: 10018157638
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 7893584
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7893584
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles