Matrix Addressable Micro-Pixel 280 nm Deep UV Light-Emitting Diodes
Access this Article
Search this Article
We report the fabrication and characterization of a $10\times 10$ matrix addressable micro-pixel AlGaN-based deep UV light-emitting diodes (LEDs) with emission at 280 nm. Deep reactive ion etching and benzocyclobutene dielectric deposition were used for pixel isolation and planarization prior to the electrode grid metallization. A comparative study of devices with interconnected and individually controlled pixels is also presented to show the viability of scaling up.
- Jpn J Appl Phys
Jpn J Appl Phys 45(12), L352-L354, 2006-04-25
INSTITUTE OF PURE AND APPLIED PHYSICS