Polarity Determination of InN by Atomic Hydrogen Irradiation

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著者

    • Suzuki Akira
    • Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
    • Araki Tsutomu
    • Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
    • Nanishi Yasushi
    • Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

抄録

We have succeeded in determining the polarity of InN by atomic hydrogen (H*) irradiation for the first time. The surface of N- and In-polar InN films was exposed to H* at nominal temperatures between 200 and 500 °C for 30 to 90 min. After H* irradiation, indium (In) droplets appeared on the surface of N-polar InN, whereas they did not appear on In-polar InN. As the sample temperature was raised, the size of the In droplets on N-polar InN became bigger; furthermore the thickness of the remaining InN layers decreased. On the contrary, the thickness of In-polar InN layers remained unchanged. The mechanisms for these polarity-dependent surface behaviors are discussed. We propose H* irradiation as one of the promising methods for the polarity determination of InN.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(14), L384-L386, 2006-04-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018157798
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7893795
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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