Characteristics of AlN/Ni(111) Heterostructures and their Application to Epitaxial Growth of GaN

• Tae-Won Kim

• Nobuyuki Matsui

• Jitsuo Ohta

Bibliographic Information

Other Title

• Characteristics of AlN Ni 111 Heterostructures and their Application to Epitaxial Growth of GaN

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (12-16), L396-398, 2006-04

  Tokyo : Japan Society of Applied Physics

Keywords

• pulsed laser deposition
• heterointerfaces

Details

• CRID: 1523106605535207168
• NII Article ID: 10018157846
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 7893848
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7893848
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles