Electron-Beam Domain Writing in Stoichiometric LiTaO3 Single Crystal by Utilizing Resist Layer
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Ferroelectric crystals with patterned domain structures, such as LiTaO3, show excellent optical properties and have thus been used as materials for functional photonic devices. The effect of a resist layer on microscale domain engineering by electron-beam direct writing was examined using stoichiometric LiTaO3 single crystals. It was demonstrated that using an electron-beam (e-beam) resist to spatially confine the beam electrons, a regular, uniform dot array of domains (with a size of 1 μm) could be fabricated along the $z$-axis throughout the crystal. Ring-shaped domains could be fabricated by this technique. Our experiments pave the way for improving the e-beam domain fabrication method by utilizing a resist covering.
- Jpn J Appl Phys
Jpn J Appl Phys 45(14), L399-L402, 2006-04-25
INSTITUTE OF PURE AND APPLIED PHYSICS