New Transparent Conducting Al-doped ZnO Film Preparation Techniques for Improving Resistivity Distribution in Magnetron Sputtering Deposition

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著者

    • Mochizuki Yuu
    • Optoelectronic Device System R&D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan

抄録

For the purpose of substituting transparent conducting Al-doped ZnO (AZO) thin films for indium–tin-oxide (ITO) transparent electrodes, investigations have been conducted to improve resistivity distribution using magnetron sputtering techniques. New techniques, such as adding an rf (13.56 MHz) component to dc magnetron sputtering depositions with or without the introduction of hydrogen gas into the deposition chamber, resulted in a considerable improvement of resistivity distribution. A resistivity as low as $5 \times 10^{-4}$ $\Omega$ cm and a more uniform resistivity distribution on the substrate surface were obtained in AZO films prepared with a thickness of 200 nm on glass substrates at a temperature of 200 °C.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(15), L409-L412, 2006-04-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018157906
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7893901
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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