On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors

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Influences of gate-recess etching with BCl3 plasma in drain current ($I_{\text{D}}$) collapse were performed on different cap layers (i-GaN, n-GaN, and p-GaN) grown AlGaN/GaN high-electron-mobility transistors (HEMTs). Due to the decrease of dynamic-source-resistance by gate-recess, the increase of maximum drain current density and maximum extrinsic transconductance were observed in all cap layers grown AlGaN/GaN HEMTs. After gate-recess etching, about 14 and 17% of decrease in $I_{\text{D}}$ collapse were observed on n-GaN and p-GaN cap layers HEMTs, respectively when compared to non-recessed HEMTs. However, increase (${\sim}47$%) of $I_{\text{D}}$ collapse was observed in i-GaN cap layer HEMTs. The decrease of $I_{\text{D}}$ collapse in doped GaN cap layer HEMTs is possibly due to the compensation of dopant related traps with plasma induced traps. The increase of $I_{\text{D}}$ collapse in i-GaN cap layer HEMTs may be due to the incorporation of damage related traps by gate-recess etching. The decrease and increase of trapping effects were qualitatively confirmed by white-light illuminated $I_{\text{DS}}$–$V_{\text{DS}}$ characteristics. An increase of gate leakage current in all recessed gate AlGaN/GaN HEMTs are due to the BCl3 plasma induced damage.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(8), L220-L223, 2006-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158157
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7863709
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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