On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors

• Subramaniam Arulkumaran

• Takashi Egawa

• Lawrence Selvaraj

書誌事項

タイトル別名

• On the Effects of Gate Recess Etching in Current Collapse of Different Cap Layers Grown AlGaN GaN High Electron Mobility Transistors

収録刊行物

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (8-11), L220-223, 2006

  Tokyo : Japan Society of Applied Physics

キーワード

• AlGaN/GaN HEMTs
• GaN cap layer
• drain current collapse
• leakage current
• trapping effect

詳細情報

• CRID: 1522825128375886976
• NII論文ID: 10018158157
• NII書誌ID: AA11906093
• ISSN: 00214922
• NDL書誌ID: 7863709
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7863709
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles