Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

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The effect of surface passivation on two-dimensional electron gas (2DEG) carrier density in undoped AlGaN/GaN heterostructures is investigated by capacitance–voltage ($C$–$V$) measurements. All oxides used (SiO2, Al2O3, and Ta2O5) experienced a decrease in 2DEG carrier concentration with increasing thickness of the respective oxide layers between the gate and the AlGaN layer. In contrast, the 2DEG carrier concentration increased markedly with increasing Si3N4 layer thickness. An elementary polarization model was used to fit the behavior for all materials and thicknesses leading to quantitative results. In combination with bowing measurements, the fitting suggests that the effect of the Si3N4 on the 2DEG carrier concentration can be traced back mainly to an increase in piezoelectric polarization charge due to strain, whereby changes in the 2DEG carrier concentration caused by oxides are explained by 2DEG charge accumulation due to fixed interface charges at the AlGaN/oxide interface and in the bulk of the oxides.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(8), L224-L226, 2006-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158174
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7863713
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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