Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ($<$150 °C) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

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著者

    • Lim Hyuck
    • Samsung Advanced Institute of Technology (SAIT), San 24, Nongseo-ri, Kiheung-eup, Yongin, Kyunggi-do 449-901, Korea
    • Park Kuyng-Bae
    • Samsung Advanced Institute of Technology (SAIT), San 24, Nongseo-ri, Kiheung-eup, Yongin, Kyunggi-do 449-901, Korea
    • Cho Chul-Lae
    • Department of Electronics Engineering, Sejong University, 98 Kunja-dong, Kwangjin-gu, Seoul 143-747, Korea
    • Lee Kyung-Eun
    • Department of Electronics Engineering, Sejong University, 98 Kunja-dong, Kwangjin-gu, Seoul 143-747, Korea
    • Kim Do-Young
    • Samsung Advanced Institute of Technology (SAIT), San 24, Nongseo-ri, Kiheung-eup, Yongin, Kyunggi-do 449-901, Korea
    • Jung Ji-Sim
    • Samsung Advanced Institute of Technology (SAIT), San 24, Nongseo-ri, Kiheung-eup, Yongin, Kyunggi-do 449-901, Korea
    • Kwon Jang-Yeon
    • Samsung Advanced Institute of Technology (SAIT), San 24, Nongseo-ri, Kiheung-eup, Yongin, Kyunggi-do 449-901, Korea
    • Noguchi Takashi
    • Samsung Advanced Institute of Technology (SAIT), San 24, Nongseo-ri, Kiheung-eup, Yongin, Kyunggi-do 449-901, Korea

抄録

We deposited amorphous silicon (a-Si) films below 150 °C with a custom-designed catalytic chemical vapor deposition (Cat-CVD) system. The hydrogen content of the films was controlled at less than 1.5 at. %. Excimer laser crystallization was performed without the preliminary dehydrogenation process. Crystallization occurred at a laser energy density above 70 mJ/cm2. Thin-film transistors (TFTs) were fabricated while the entire process temperatures were maintained at below 200 °C. We obtained a field-effect mobility of higher than 100 cm2/(V s) and a sub-threshold slope of 116 mV/dec. The a-Si film prepared by a low temperature Cat-CVD is a promising candidate for polycrystalline silicon TFTs of the active matrix display.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(8), L227-L229, 2006-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158195
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7863728
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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