Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ($<$150 °C) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application
We deposited amorphous silicon (a-Si) films below 150 °C with a custom-designed catalytic chemical vapor deposition (Cat-CVD) system. The hydrogen content of the films was controlled at less than 1.5 at. %. Excimer laser crystallization was performed without the preliminary dehydrogenation process. Crystallization occurred at a laser energy density above 70 mJ/cm2. Thin-film transistors (TFTs) were fabricated while the entire process temperatures were maintained at below 200 °C. We obtained a field-effect mobility of higher than 100 cm2/(V s) and a sub-threshold slope of 116 mV/dec. The a-Si film prepared by a low temperature Cat-CVD is a promising candidate for polycrystalline silicon TFTs of the active matrix display.
- Japanese journal of applied physics. Pt. 2, Letters
Japanese journal of applied physics. Pt. 2, Letters 45(8), L227-L229, 2006-03-25
Japan Society of Applied Physics