Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition

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著者

    • Kim Hoon Kim Hoon
    • Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
    • Yoshii Naoki
    • Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan
    • Hosaka Shigetoshi
    • Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan
    • Shimogaki Yukihiro
    • Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

抄録

The effect of Ru crystal orientation on the deposition behavior of chemical vapor deposition (CVD) Cu was investigated. The crystal orientation of Ru films was modulated by adjusting sputtering temperature. Ru(001) and random orientation films were obtained by sputtering at 300 °C and room temperature, respectively. CVD Cu on Ru with the (001) crystal orientation had a smooth morphology and a strong (111) peak. However, CVD Cu on the Ru film with the random orientation had a rough surface and a random orientation. A low lattice misfit between Cu(111) and Ru(001) realized a good morphology and a strong (111) orientation of CVD Cu films, which coincide with our lattice misfit concept.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(8), L233-L235, 2006-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158228
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7863743
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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