Stress Reliability Comparison of Metal–Oxide–Semiconductor Devices with CoSi2 and TiSi2 Gate Electrode Materials

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著者

    • Wu You-Lin
    • Department of Electrical Engineering, National Chi-Nan University, Puli, Nantou 545, Taiwan
    • Lai Min-Yen
    • Department of Electrical Engineering, National Chi-Nan University, Puli, Nantou 545, Taiwan

抄録

Conventionally, CoSi2 is considered to be a better choice than TiSi2 for integrated circuit fabrication due to its lower resisitivity and better thermal stability. In this letter we compare for the first time the stress reliability of metal–oxide–semiconductor (MOS) devices with CoSi2 and TiSi2 as gate electrode materials. We found that the use of TiSi2 as a gate electrode material can provide a better stress resistance than CoSi2, when negatively-biased constant current stress and constant voltage stress are applied.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(9), L257-L258, 2006-03-25 

    INSTITUTE OF PURE AND APPLIED PHYSICS

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各種コード

  • NII論文ID(NAID)
    10018158364
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  JSAP 
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