Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials

• WU You-Lin

  Department of Electrical Engineering, National Chi-Nan University

• LAI Min-Yen

  Department of Electrical Engineering, National Chi-Nan University

Journal

• Japanese journal of applied physics. Pt. 2, Letters

  Japanese journal of applied physics. Pt. 2, Letters 45 (8), L257-L258, 2006-03-25

Keywords

• oxide reliability
• titanium silicide
• cobalt silicide
• constant current stress
• constant voltage stess

Details

• CRID: 1570854175405213824
• NII Article ID: 10018158364
• NII Book ID: AA10650595
• ISSN: 00214922
• Text Lang: en
• Data Source:
  • CiNii Articles