Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

• ENDO Kazuhiko

  National Institute of Advanced Industrial Science and Technology (AIST)

• NODA Shuichi

  Institute of Fluid Science, Tohoku University

• MASAHARA Meishoku

  National Institute of Advanced Industrial Science and Technology (AIST)

• KUBOTA Tomohiro

  Institute of Fluid Science, Tohoku University

• OZAKI Takuya

  Institute of Fluid Science, Tohoku University

• SAMUKAWA Seiji

  Institute of Fluid Science, Tohoku University

• LIU Yongxun

  National Institute of Advanced Industrial Science and Technology (AIST)

• ISHII Kenichi

  National Institute of Advanced Industrial Science and Technology (AIST)

• ISHIKAWA Yuki

  National Institute of Advanced Industrial Science and Technology (AIST)

• SUGIMATA Etsuro

  National Institute of Advanced Industrial Science and Technology (AIST)

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology (AIST)

• TAKASHIMA Hidenori

  National Institute of Advanced Industrial Science and Technology (AIST)

• YAMAUCHI Hiromi

  National Institute of Advanced Industrial Science and Technology (AIST)

• SUZUKI Eiichi

  National Institute of Advanced Industrial Science and Technology (AIST)

収録刊行物

• Japanese journal of applied physics. Pt. 2, Letters

  Japanese journal of applied physics. Pt. 2, Letters 45 (8), L279-L281, 2006-03-25

キーワード

• double-gate MOSFET
• neutral beam
• etching
• damage-less
• mobility

詳細情報

• CRID: 1572824500241937792
• NII論文ID: 10018158463
• NII書誌ID: AA10650595
• ISSN: 00214922
• 本文言語コード: en
• データソース種別:
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