TiO2-Coated Transparent Conductive Oxide (SnO2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen

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著者

    • Kambe Mika Kambe Mika
    • Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
    • Sato Kazuo Sato Kazuo
    • Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan
    • Kurokawa Yasuyoshi
    • Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
    • Miyajima Shinsuke
    • Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
    • Fukawa Makoto
    • Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan
    • Taneda Naoki
    • Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan
    • Yamada Akira
    • Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
    • Konagai Makoto
    • Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

抄録

The durability of textured transparent conductive oxide (TCO) thin films against atomic hydrogen was investigated. An ultrathin TiO2 layer of 2 nm thickness was deposited on textured fluorine-doped tin oxide (SnO2:F) films, successively by atmospheric pressure chemical vapor deposition (AP-CVD). TCO films with a TiO2 layer showed a higher optical transmittance and a lower resistivity after exposure to atomic hydrogen excited by very high frequency (VHF) plasma, while TCO films without a TiO2 layer showed a lower optical transmittance and a higher resistivity after the exposure. These TCO films were characterized by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) before and after the exposure to atomic hydrogen.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(10), L291-L293, 2006-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158529
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7864137
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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