Avalanche Characteristics of the Te-Doped Amorphous Se Photoconductive Target for a Complementary Metal–Oxide–Semiconductor Image Sensor

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著者

    • Tanioka Kenkichi Tanioka Kenkichi
    • Advanced Broadcasting Devices Research Division, NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan

抄録

We investigated the avalanche characteristics of the amorphous Se (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) photoconductive target for a complementary metal–oxide–semiconductor (CMOS) image sensor. To improve the quantum efficiency of the a-Se photoconductive target, thin a-Se layer was doped with Te. Te concentration of the Te-doped a-Se layer within the 0.4-μm-thick a-Se HARP film was 15 wt. %. In the avalanche multiplication phenomena of the a-Se HARP target, the photocurrent is affected by the ionization of the a-Se atom due to hole accelerated at a high electric field. The avalanche multiplication factor and hole ionization rate of the Te-doped a-Se HARP target exponentially increased with increasing target voltage. Also the spectral response of the Te-doped a-Se HARP photoconductive target for a CMOS image sensor was dependent on the target voltage.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(11), L307-L309, 2006-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158595
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7864186
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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