Avalanche Characteristics of the Te-Doped Amorphous Se Photoconductive Target for a Complementary Metal–Oxide–Semiconductor Image Sensor
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We investigated the avalanche characteristics of the amorphous Se (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) photoconductive target for a complementary metal–oxide–semiconductor (CMOS) image sensor. To improve the quantum efficiency of the a-Se photoconductive target, thin a-Se layer was doped with Te. Te concentration of the Te-doped a-Se layer within the 0.4-μm-thick a-Se HARP film was 15 wt. %. In the avalanche multiplication phenomena of the a-Se HARP target, the photocurrent is affected by the ionization of the a-Se atom due to hole accelerated at a high electric field. The avalanche multiplication factor and hole ionization rate of the Te-doped a-Se HARP target exponentially increased with increasing target voltage. Also the spectral response of the Te-doped a-Se HARP photoconductive target for a CMOS image sensor was dependent on the target voltage.
- Jpn J Appl Phys
Jpn J Appl Phys 45(11), L307-L309, 2006-03-25
INSTITUTE OF PURE AND APPLIED PHYSICS