Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
Bibliographic Information
- Other Title
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- Low Leakage Current Enhancement Mode AlGaN GaN Heterostructure Field Effect Transistor Using p Type Gate Contact
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Journal
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- Japanese journal of applied physics. Part 2, Letters & express letters
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Japanese journal of applied physics. Part 2, Letters & express letters 45 (8-11), L319-321, 2006
Tokyo : Japan Society of Applied Physics
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Details
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- CRID
- 1520854805556327168
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- NII Article ID
- 10018158654
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- NII Book ID
- AA11906093
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- ISSN
- 00214922
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- NDL BIB ID
- 7864217
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles