# Improvement of Metal–Oxide Semiconductor Interface Characteristics in Complementary Metal–Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing

## 抄録

In this paper, a method of improving the characteristics of complementary metal–oxide semiconductor (CMOS) on Si(111) wafers is presented. The combination of fluorine (F) implantation and long-time hydrogen annealing was applied to (111)CMOS devices for the first time. The interface state density in a (111)MOS device was dramatically reduced to 8% ($2.74 \times 10^{10}$ cm-2$\cdot$eV-1) of the original value ($3.40\times 10^{11}$ cm-2 $\cdot$eV-1). As a result, field-effect mobility was increased by about 70% and the 1/f noise level was halved as compared with (111)CMOS devices without the improvement method. The performance of improved (111)CMOS devices was comparable to that of (100)CMOS devices fabricated in the same batch process. The improvement effect of this method is much better than that of our previous method which included only long-time H2 annealing.

## 収録刊行物

• Japanese journal of applied physics. Pt. 2, Letters

Japanese journal of applied physics. Pt. 2, Letters 45(4), L108-L110, 2006-02-25

Japan Society of Applied Physics

## 各種コード

• NII論文ID(NAID)
10018158776
• NII書誌ID(NCID)
AA10650595
• 本文言語コード
EN
• 資料種別
SHO
• ISSN
0021-4922
• NDL 記事登録ID
7821822
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z54-J337
• データ提供元
CJP書誌  NDL  JSAP

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