Improvement of Metal-Oxide Semiconductor Interface Caracteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing

• Yoshiko Kato

• Hidekuni Takao

• Kazuaki Sawada

書誌事項

タイトル別名

• Improvement of Metal Oxide Semiconductor Interface Caracteristics in Complementary Metal Oxide Semiconductor on Si 111 by Combination of Fluorine Implantation and Long Time Hydrogen Annealing

収録刊行物

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (4-7), L108-110, 2006

  Tokyo : Japan Society of Applied Physics

キーワード

• (111)CMOS
• interface state density

詳細情報

• CRID: 1522262180556483584
• NII論文ID: 10018158776
• NII書誌ID: AA11906093
• ISSN: 00214922
• NDL書誌ID: 7821822
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7821822
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles