# Improving High-$\kappa$ Gate Dielectric Properties by High-Pressure Water Vapor Annealing

## 抄録

High-pressure water vapor annealing has been found to improve the electrical properties of high-$\kappa$ gate oxides. A vapor-annealing time of less than 60 min was effective in decreasing leakage current density and increasing capacitance density. This improvement is related to the active species in the water vapor which can react with unsaturated bonds in the bulk oxide film and dangling bonds at the film interface. However, the electrical properties did not improve after longer annealing periods. Optimizing the annealing conditions is essential for obtaining high quality high-$\kappa$ films.

## 収録刊行物

• Japanese journal of applied physics. Pt. 2, Letters

Japanese journal of applied physics. Pt. 2, Letters 45(4), L120-L123, 2006-02-25

Japan Society of Applied Physics

## 各種コード

• NII論文ID(NAID)
10018158834
• NII書誌ID(NCID)
AA10650595
• 本文言語コード
EN
• 資料種別
SHO
• ISSN
0021-4922
• NDL 記事登録ID
7821912
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z54-J337
• データ提供元
CJP書誌  NDL  JSAP

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