Improving High-$\kappa$ Gate Dielectric Properties by High-Pressure Water Vapor Annealing

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著者

    • Fuyuki Takashi
    • Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan
    • Sameshima Toshiyuki
    • Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
    • Horii Sadayoshi
    • Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc., 2-1 Yasuuchi, Yatsuo-machi, Nei-gun, Toyama 939-2393, Japan

抄録

High-pressure water vapor annealing has been found to improve the electrical properties of high-$\kappa$ gate oxides. A vapor-annealing time of less than 60 min was effective in decreasing leakage current density and increasing capacitance density. This improvement is related to the active species in the water vapor which can react with unsaturated bonds in the bulk oxide film and dangling bonds at the film interface. However, the electrical properties did not improve after longer annealing periods. Optimizing the annealing conditions is essential for obtaining high quality high-$\kappa$ films.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(4), L120-L123, 2006-02-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158834
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7821912
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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