Self-Consistent Modeling of Feature Profile Evolution in Plasma Etching and Deposition

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抄録

We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(5), L132-L134, 2006-02-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158878
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7821941
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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