Growth Behavior of $c$-Axis-Oriented Epitaxial SrBi2Ta2O9 Films on SrTiO3 Substrates with Atomic Scale Step Structure

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著者

    • Takahashi Kenji Takahashi Kenji
    • Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
    • Suzuki Muneyasu Suzuki Muneyasu
    • Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
    • Funakubo Hiroshi
    • Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

抄録

$c$-Axis-oriented ultra thin SrBi2Ta2O9 films were epitaxially grown on atomically flat (100)SrTiO3 substrates by pulse-gas-introduced metalorganic chemical vapor deposition, and their growth behavior was observed by atomic force microscopy (AFM). Growth-time-resolved AFM images clearly showed that a completely filled SrBi2Ta2O9 layer was laid under an incompletely grown half-unit-cell two-dimensional (2D)-island layer, indicating the Frank–van der Merwe (layer-by-layer) growth mode. This is the first step-by-step direct observation of layer-by-layer growth of $c$-axis-oriented bismuth layer-structured dielectric (BLD) films and is considered to be the origin of the thickness-independent smooth surface of $c$-axis-oriented BLD films.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(5), L138-L141, 2006-02-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158917
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7822056
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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