Growth Behavior of $c$-Axis-Oriented Epitaxial SrBi2Ta2O9 Films on SrTiO3 Substrates with Atomic Scale Step Structure
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$c$-Axis-oriented ultra thin SrBi2Ta2O9 films were epitaxially grown on atomically flat (100)SrTiO3 substrates by pulse-gas-introduced metalorganic chemical vapor deposition, and their growth behavior was observed by atomic force microscopy (AFM). Growth-time-resolved AFM images clearly showed that a completely filled SrBi2Ta2O9 layer was laid under an incompletely grown half-unit-cell two-dimensional (2D)-island layer, indicating the Frank–van der Merwe (layer-by-layer) growth mode. This is the first step-by-step direct observation of layer-by-layer growth of $c$-axis-oriented bismuth layer-structured dielectric (BLD) films and is considered to be the origin of the thickness-independent smooth surface of $c$-axis-oriented BLD films.
- Jpn J Appl Phys
Jpn J Appl Phys 45(5), L138-L141, 2006-02-25
INSTITUTE OF PURE AND APPLIED PHYSICS