Aggregation of Nitrogen on Oxygen Precipitate in Annealed Czochralski Silicon Wafer Observed by Secondary Ion Mass Spectroscopy Measurement
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Nitrogen (N) distribution in the annealed Czochralski (CZ) wafer is investigated by secondary ion mass spectroscopy (SIMS) imaging measurement. Intensity mapping of secondary ions shows the aggregation of N on the oxygen precipitate in the annealed wafer. Infrared absorption peak caused by interstitial N pairs (N–N pairs) is observed in the as-grown wafer. Based on the experimental results of SIMS and Fourier transform infrared absorption (FT-IR) measurement, behavior of N during annealing for the annihilation of sub-surface void defects is discussed.
- Jpn J Appl Phys
Jpn J Appl Phys 45(6), L148-L150, 2006-02-25
INSTITUTE OF PURE AND APPLIED PHYSICS