Aggregation of Nitrogen on Oxygen Precipitate in Annealed Czochralski Silicon Wafer Observed by Secondary Ion Mass Spectroscopy Measurement

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Nitrogen (N) distribution in the annealed Czochralski (CZ) wafer is investigated by secondary ion mass spectroscopy (SIMS) imaging measurement. Intensity mapping of secondary ions shows the aggregation of N on the oxygen precipitate in the annealed wafer. Infrared absorption peak caused by interstitial N pairs (N–N pairs) is observed in the as-grown wafer. Based on the experimental results of SIMS and Fourier transform infrared absorption (FT-IR) measurement, behavior of N during annealing for the annihilation of sub-surface void defects is discussed.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 45(6), L148-L150, 2006-02-25

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158958
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7822075
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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