Fabrication of Multilayer Structures and Ramp-Edge Josephson Junctions with (Hg,Re)Ba2CaCu2Oy Films

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著者

    • Ogawa Akihiro Ogawa Akihiro
    • Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan
    • Sugano Tsuyoshi Sugano Tsuyoshi
    • Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan
    • Kamitani Ai
    • Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan
    • Adachi Seiji
    • Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan
    • Tanabe Keiichi
    • Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062, Japan

抄録

Multilayer structures consisting of (Hg0.9Re0.1)Ba2CaCu2Oy [(Hg,Re)-1212] superconducting layers and CeO2 insulating layers have been successfully fabricated. A CeO2 film could be epitaxially grown on a (Hg,Re)-1212 film at a relatively low temperature of 500°C without deterioration of crystallinity and superconductivity for (Hg,Re)-1212. Moreover, another (Hg,Re)-1212 film was grown on CeO2/(Hg,Re)-1212 bilayer films to form trilayer films. The upper and lower (Hg,Re)-1212 layers for the trilayer films exhibited critical temperatures ($T_{\text{c}}$'s) of 112–115 and 112–120 K, respectively. Ramp-edge-type interface-engineered Josephson junctions were fabricated using the (Hg,Re)-1212 multilayer structures. The junctions showed resistively shunted junction like current–voltage characteristics above 77–100 K, and a magnetic-field modulation of the critical current ($I_{\text{c}}$) of approximately 60% at 100 K.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 45(6), L158-L161, 2006-02-25

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018159031
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7822484
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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