Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers

• Masataka Ohta

• Tatsuya Furuhata

• Takahiro Iwasaki

書誌事項

タイトル別名

• Structure Dependent Lasing Characteristics of Tunnel Injection GaInAs AlGaAs Single Quantum Well Lasers

収録刊行物

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (4-7), L162-164, 2006

  Tokyo : Japan Society of Applied Physics

キーワード

• quantum well laser
• GaInAs/AlGaAs
• double-barrier resonant tunneling
• characteristic temperature

詳細情報

• CRID: 1521136279903756800
• NII論文ID: 10018159053
• NII書誌ID: AA11906093
• ISSN: 00214922
• NDL書誌ID: 7823401
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7823401
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles