All-Monolithic 1.55 μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 μm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8°, the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80°C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30 km.
- Japanese journal of applied physics. Pt. 2, Letters
Japanese journal of applied physics. Pt. 2, Letters 45(1), L8-L10, 2006-01-25
Japan Society of Applied Physics