All-Monolithic 1.55 μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

この論文にアクセスする

この論文をさがす

著者

    • Park Mi-Ran Park Mi-Ran
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Kwon O-Kyun Kwon O-Kyun
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Han Won-Seok [他] Han Won-Seok
    • Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Lee Ki-Hwang
    • RayCan Co., Ltd., 138 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Park Seong-Joo
    • RayCan Co., Ltd., 138 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Yoo Byueng-Su
    • RayCan Co., Ltd., 138 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea

抄録

We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 μm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8°, the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80°C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30 km.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(1), L8-L10, 2006-01-25 

    Japan Society of Applied Physics

参考文献:  12件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10018159347
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7790223
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ