Scanning Tunneling Spectroscopy Study of the ZnO(0001)–Zn Surface

この論文にアクセスする

この論文をさがす

著者

    • Kishida Masaru Kishida Masaru
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Murata Yuya Murata Yuya
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Maeda Daisuke [他] Maeda Daisuke
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Okado Hideaki
    • Research Center for Ultrahigh Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
    • Honda Shin-ichi
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Oura Kenjiro
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Katayama Mitsuhiro
    • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

抄録

The electronic structure of the ZnO(0001)–Zn surface was studied using scanning tunneling spectroscopy (STS) and first principles molecular dynamics. The STS spectrum indicated that the clean surface is n-type semiconducting with a band gap of about 3.3 eV. The local density of states (LDOS) calculated using ZnO slab model was in qualitative agreement with the STS spectrum, and revealed that occupied and unoccupied peaks originate from O and Zn atoms at the top bilayer of the surface, respectively. From the contour plots of LDOS, it was found that Zn atoms dominantly contribute to both occupied and unoccupied LDOS distributions and their broadening on the surface, which prevents atom-resolved scanning tunneling microscopy imaging of ZnO(0001) surface.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(1), L39-L41, 2006-01-25 

    Japan Society of Applied Physics

参考文献:  22件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10018159505
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7790354
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ