Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser

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著者

    • Chen I-Liang Chen I-Liang
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
    • Hsu Wei-Chou Hsu Wei-Chou
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
    • Kuo Hao-Chung
    • Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.
    • Su Ke-Hua
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
    • Chiou Chih-Hung
    • Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
    • Wang Jin-Mei
    • Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
    • Chang Yu-Hsiang
    • Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.

抄録

A series of highly strained InGaAs quantum wells (QWs) with GaAs barriers emitting at wavelength longer than 1.2 μm are grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The optimized windows of the V/III ratio of the InGaAs layer and the growth rate of the barrier are first investigated on thease highly strained QWs. By an appropriate choice of the growth conditions, we extend the room-temperature photoluminescence (PL) wavelength of InGaAs QWs to 1245 nm, which corresponds to an indium content of 42%. A GaAs-based InGaAs vertical-cavity surface-emitting laser (VCSEL) at an emission wavelength of 1.28 μm with a large detuning of 90 nm has been realized by the use of highly strained InGaAs QWs.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(2), L54-L56, 2006-01-25 

    Japan Society of Applied Physics

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キーワード

各種コード

  • NII論文ID(NAID)
    10018159578
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7790386
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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