On Application of Analytical Model for Drain-Coupling Split-Gate Flash : Analytical Solution to Source-Side Injection Multilevel Programming

• WANG Yu-Hsiung

  Department of Electrical Engineering, National Tsing Hua University

• WU Meng-Chyi

  Department of Electrical Engineering, National Tsing Hua University

• CHU Wen-Ting

  Nonvolatile Memory Division, Taiwan Semiconductor Manufacturing Company, Ltd.

• LIN Chrong-Jong

  Nonvolatile Memory Division, Taiwan Semiconductor Manufacturing Company, Ltd.

• LIN Yung-Tao

  Nonvolatile Memory Division, Taiwan Semiconductor Manufacturing Company, Ltd.

• WANG Chung S.

  Nonvolatile Memory Division, Taiwan Semiconductor Manufacturing Company, Ltd.

Journal

• Japanese journal of applied physics. Pt. 2, Letters

  Japanese journal of applied physics. Pt. 2, Letters 45 (1), L77-L79, 2006-01-25

Keywords

• multilevel flash memories
• source-side injection programming
• programming model

Details

• CRID: 1572824500241846272
• NII Article ID: 10018159685
• NII Book ID: AA10650595
• ISSN: 00214922
• Text Lang: en
• Data Source:
  • CiNii Articles