フッ素系ガスプラズマRIEを用いたLiNbO_3結晶のマスクを使用しない微細表面加工 Fine Surface Processing of LiNbO_3 Crystal Etched without Mask Using Fluorine System Gas Plasma RIE

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Etching characteristic LiNbO3 single crystal has been investigated using plasma RIE (Reactive Ion Etching) with mixture gases of CF4/Ar, CF4/H2, CF4/Ar/H2. The etched surface was evaluated by means of atomic force microscopy. The etched rate for -Z surface of LiNbO3 single crystal was higher than +Z surface using CF4/Ar and CF4/H2 mixture gases. Possibility of the deep etching at the boundary between -Z surface and +Z surface for partially polarization-reversed LiNbO3 without mask was investigated. The best condition of the deep etching was obtained by using CF4/H2 mixture gas. The value of aspect ratio is approximately 1.0 on this condition.

収録刊行物

  • 電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society  

    電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society 126(8), 830-836, 2006-08-01 

    一般社団法人 電気学会

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各種コード

  • NII論文ID(NAID)
    10018181547
  • NII書誌ID(NCID)
    AN10136312
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854205
  • NDL 記事登録ID
    8053733
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-793
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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