A High-Speed Thermoelectric Infrared Sensor Fabricated by CMOS Technology and Micromachining

• Hirota Masaki

  Technology Research Lab. No. 1, Nissan Research Center, Nissan Motor Co., Ltd.

Bibliographic Information

Other Title

• High Speed Thermoelectric Infrared Sensor Fabricated by CMOS Technology and Micromachining

Abstract

A high-speed thermoelectric infrared sensor has been fabricated by the CMOS process and micromachining. The time constant of the sensor has been reduced by means of a reduction of sensor size and a thin Si₃N₄ membrane structure. The sensitivity has been improved with a precisely patterned Au black infrared absorption layer formed by a PSG lift-off process. The characteristics of the sensor have been simulated using a thermal equivalent circuit model. A time constant of 270 μsec and sensitivity of 60 V/W at atmospheric pressure have been achieved. This time constant is smaller than any other reported value of thermopiles.

Journal

• IEEJ Transactions on Sensors and Micromachines

  IEEJ Transactions on Sensors and Micromachines 126 (8), 393-396, 2006

  The Institute of Electrical Engineers of Japan

Keywords

• infrared sensors
• thermopiles
• thermoelectric
• Au-black

Details

• CRID: 1390001204460131712
• NII Article ID: 10018182163
• NII Book ID: AN1052634X
• DOI: 10.1541/ieejsmas.126.393
• ISSN: 13475525
• ISSN: 13418939
• NDL BIB ID: 8056203
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8056203
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas/126/8/126_8_393/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed