開構造支持を持つSOI角速度センサ SOI Angular Rate Sensor with Open Beam Structure

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An SOI (Silicon on Insulator) angular rate sensor with an open beam structure (OBS) has been designed and fabricated. To obtain good performance of the sensor, the FEM (Finite Element Method) analysis was carried out for several types of sensor structures to evaluate the vibration stability of the sensor. The stability of vibration modes was investigated by defining the independency between the excitation and detection vibration modes of the sensor structures. The FEM results showed the proposed OBS improved the independency by 60 times compared to the conventional structure.<br>The OBS also made it possible to wire from electrodes beside the mass of the sensor to exterior bonding electrodes by mono-layer silicon on the SOI. Due to the easy wiring, the process became simple and low cost. The size of the sensor element was 1mm × 1mm × 0.5mm, and good linearity within +/- 0.5 % of the sensor output was obtained. The experimental results showed that the OBS provided fine sensor features; good stability in wide temperature range, and high precision. Therefore, this sensor is suitable for automotive applications, and has attained to mass production.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 126(8), 425-430, 2006-08-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018182229
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    8056386
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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