Magneto-resistance Effect of Sn-doped InSb Single Crystal Thin Films and Application to Rotation Detection

• Shibasaki Ichiro

  Shibasaki Laboratory., Asahikasei Corporation

• Nishimura Kazuhiro

  Applied Technology dept., Asahikasei Electronics Co., Ltd

• Goto Hiromasa

  Shibasaki Laboratory., Asahikasei Corporation

• Okamoto Atsushi

  Shibasaki Laboratory., Asahikasei Corporation

Bibliographic Information

Other Title

• SnドープInSb単結晶薄膜の磁気抵抗効果と回転検出特性
• Sn ドープ InSbタンケッショウ ハクマク ノ ジキ テイコウ コウカ ト カイテン ケンシュツ トクセイ

Abstract

Using Sn-doped single crystal InSb thin films of 1.0μm thickness grown on GaAs substrates by molecular beam epitaxy (MBE), we have developed new magneto-resistance (MR) elements with very small temperature dependence. These MR elements was used to form rotation detection sensors combined with bias magnet, and we can achieve the stable contactless detection of rotating gear teeth over a wide range of rotation speeds and a wide range of temperatures-20 to 140°C.

Journal

• IEEJ Transactions on Sensors and Micromachines

  IEEJ Transactions on Sensors and Micromachines 126 (8), 445-452, 2006

  The Institute of Electrical Engineers of Japan

Keywords

• magneto-resistance elements
• InSb thin film
• molecular beam epitaxy
• tin doping
• gear rotation detection

Details

• CRID: 1390282679436822400
• NII Article ID: 10018182273
• NII Book ID: AN1052634X
• DOI: 10.1541/ieejsmas.126.445
• ISSN: 13475525
• ISSN: 13418939
• NDL BIB ID: 8056466
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8056466
• Web Site: https://www.jstage.jst.go.jp/article/ieejsmas/126/8/126_8_445/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed