Design and Fabrication of a Laterally-Driven Silicon RF Micro-Switch with High Isolation

• Kamide Sho

  College of Science and Engineering, Ritsumeikan University

• Suzuki Kenichiro

  College of Science and Engineering, Ritsumeikan University

抄録

Few researches have been so far investigated in applying lateral motional MEMS structure to a micro-switch. In this paper we report on the design and fabrication of a laterally-driven silicon RF micro-switch, which is based on a capacitive-type series switch. The isolation is greatly improved by using lateral motion in mutually opposite directions. In addition, this lateral movement is effective to alleviate the adhesion of a contact area. The cooperation of electrostatic lateral force with a spring force increases the release force by 28 %. The fabricated switch is expected to have the isolation of -47.6 dB at 2 GHz and the insertion loss of less than 0.2 dB. The silicon RF transmission line proposed here helps the process very easy because of keeping the overall structure simple.

収録刊行物

• 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）

  電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 126 (8), 453-456, 2006

  一般社団法人 電気学会

キーワード

• isolation
• transmission line
• laterally-driven
• micro-switch
• electrostatic force
• SOI process

詳細情報

• CRID: 1390001204460105728
• NII論文ID: 10018182283
• NII書誌ID: AN1052634X
• DOI: 10.1541/ieejsmas.126.453
• ISSN: 13475525
• ISSN: 13418939
• NDL書誌ID: 8056489
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8056489
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas/126/8/126_8_453/_pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可