Design and Fabrication of a Laterally-Driven Silicon RF Micro-Switch with High Isolation (特集 次世代自動車センシングシステム) Design and Fabrication of a Laterally-Driven Silicon RF Micro-Switch with High Isolation
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Few researches have been so far investigated in applying lateral motional MEMS structure to a micro-switch. In this paper we report on the design and fabrication of a laterally-driven silicon RF micro-switch, which is based on a capacitive-type series switch. The isolation is greatly improved by using lateral motion in mutually opposite directions. In addition, this lateral movement is effective to alleviate the adhesion of a contact area. The cooperation of electrostatic lateral force with a spring force increases the release force by 28 %. The fabricated switch is expected to have the isolation of -47.6 dB at 2 GHz and the insertion loss of less than 0.2 dB. The silicon RF transmission line proposed here helps the process very easy because of keeping the overall structure simple.
- The Journal of the Institute of Electrical Engineers of Japan
The Journal of the Institute of Electrical Engineers of Japan 126(8), 453-456, 2006-08-01
The Institute of Electrical Engineers of Japan