選択エッチング法によるナノサイズ炭素エミッタ形成 Fabrication of Nano-sized Carbon Emitters by Selective Dry Etching Method

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抄録

  A novel method to make the sharp emitter tips having low threshold voltage of field emission was achieved using nanodiamond particles on conductive amorphous carbon films. A conductive tetrahedral amorphous (ta) carbon film and nano-sized diamond particles with the size of 50 to 200 nm were sequentially deposited by cathordic arc method using a glass substrate at room temperature. Tip structure with the height of 10 to 40 nm was formed by H<sub>2</sub> plasma etching of the diamond particles/ta-C double layer film. The threshold voltage of the field emission from the tip structures formed by the H<sub>2</sub> plasma etching was 3 V/μm that was significantly lower than 10.4 V/μm for the as-deposited diamond particles/ta-C double layer carbon film. This selective dry etching method using the nano-diamond particles could fabricate sharp and high density nano-sized diamond emitters on conductive ta-C films without any photo-masks of lithography processes.<br>

収録刊行物

  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN  

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 49(7), 430-432, 2006-07-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018210339
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    8058329
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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