書誌事項
- タイトル別名
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- Fabrication of Nano-sized Carbon Emitters by Selective Dry Etching Method
- センタク エッチングホウ ニ ヨル ナノサイズ タンソ エミッタ ケイセイ
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抄録
A novel method to make the sharp emitter tips having low threshold voltage of field emission was achieved using nanodiamond particles on conductive amorphous carbon films. A conductive tetrahedral amorphous (ta) carbon film and nano-sized diamond particles with the size of 50 to 200 nm were sequentially deposited by cathordic arc method using a glass substrate at room temperature. Tip structure with the height of 10 to 40 nm was formed by H2 plasma etching of the diamond particles/ta-C double layer film. The threshold voltage of the field emission from the tip structures formed by the H2 plasma etching was 3 V/μm that was significantly lower than 10.4 V/μm for the as-deposited diamond particles/ta-C double layer carbon film. This selective dry etching method using the nano-diamond particles could fabricate sharp and high density nano-sized diamond emitters on conductive ta-C films without any photo-masks of lithography processes.<br>
収録刊行物
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- 真空
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真空 49 (7), 430-432, 2006
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679041624704
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- NII論文ID
- 10018210339
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 8058329
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可