Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors

• PEI Y.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI H.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI S.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MIYAZAKI S.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• INUMIYA S.

  Semicondutor Leading Edge Technologies, Inc.

• NARA Y.

  Semicondutor Leading Edge Technologies, Inc.

Journal

• 電子情報通信学会技術研究報告. ED, 電子デバイス

  電子情報通信学会技術研究報告. ED, 電子デバイス 106 (137), 259-263, 2006-06-26

Keywords

• HfSiO_xN_y
• Metal Gate
• Leakage Current
• Charge Trapping
• TDDB
• Soft Breakdown

Details

• CRID: 1573387450192902912
• NII Article ID: 10018216393
• NII Book ID: AN10012954
• Text Lang: en
• Data Source:
  • CiNii Articles