Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles

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著者

    • CHO Seongjae
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • YUN Jang-Gn
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • PARK Il Han
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • LEE Jung Hoon
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • KIM Jong Pil
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • KANG Sangwoo
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • LEE Jong Duk
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • SHIN Hyungcheol
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
    • PARK Byung-Gook
    • Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

収録刊行物

  • 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス  

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 106(138), 171-174, 2006-06-26 

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各種コード

  • NII論文ID(NAID)
    10018216923
  • NII書誌ID(NCID)
    AN10013254
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • データ提供元
    CJP書誌 
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