Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles

• CHO Seongjae

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• YUN Jang-Gn

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• PARK Il Han

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• LEE Jung Hoon

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• KIM Jong Pil

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• KANG Sangwoo

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• LEE Jong Duk

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• SHIN Hyungcheol

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

• PARK Byung-Gook

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

Journal

• 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス

  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 106 (138), 171-174, 2006-06-26

Keywords

• 3-D devices
• vertical ion implantation
• doping profile
• peak concentration position (PCP)
• doping gradient

Details

• CRID: 1570291225449057280
• NII Article ID: 10018216923
• NII Book ID: AN10013254
• Text Lang: en
• Data Source:
  • CiNii Articles