High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
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- CHIEN Feng-Tso
- Dept. of Electronic Engineering, Feng Chia University
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- CHAN Chien-Liang
- Dept. of Electronic Engineering, Feng Chia University
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- LIAO Chien-Nan
- Dept. of Electronic Engineering, Feng Chia University
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- YIN Jin-Mu
- Dept. of Electronic Engineering, Feng Chia University
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- CHIU Hsien-Chin
- Dept. of Electronic Engineering, Chang Gung University
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- CHIEN Feng Tsun
- Dept. of Electronics Engineering, National Chiao Tung University
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収録刊行物
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- 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
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電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 106 (138), 189-194, 2006-06-26
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- CRID
- 1572824500239452672
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- NII論文ID
- 10018216949
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- NII書誌ID
- AN10013254
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- 本文言語コード
- en
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- データソース種別
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