Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors

• PEI Y.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI H.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI S.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MIYAZAKI S.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• INUMIYA S.

  Semicondutor Leading Edge Technologies, Inc.

• NARA Y.

  Semicondutor Leading Edge Technologies, Inc.

収録刊行物

• 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス

  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 106 (138), 259-263, 2006-06-26

キーワード

• HfSiO_xN_y
• Metal Gate
• Leakage Current
• Charge Trapping
• TDDB
• Soft Breakdown

詳細情報

• CRID: 1571135650379281536
• NII論文ID: 10018217090
• NII書誌ID: AN10013254
• 本文言語コード: en
• データソース種別:
  • CiNii Articles