High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology
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- YAMAGUCHI S.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- TAI K.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- HIRANO T.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- ANDO T.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- HIYAMA S.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- WANG J.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- HAGIMOTO Y.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- NAGAHAMA Y.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- KATO T.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- NAGANO K.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- YAMANAKA M.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- TERAUCHI S.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- KANDA S.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- YAMAMOTO R.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- TATESHITA Y.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- TAGAWA Y.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- IWAMOTO H.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- SAITO M.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- NAGASHIMA N.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
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- KADOMURA S.
- Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation
Bibliographic Information
- Other Title
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- バルクCMOS向け低閾値電圧・高移動度デュアルメタルゲートトランジスタの開発
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Journal
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- 電子情報通信学会技術研究報告. ICD, 集積回路
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電子情報通信学会技術研究報告. ICD, 集積回路 106 (207), 121-126, 2006-08-10
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Keywords
Details 詳細情報について
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- CRID
- 1573668925144315520
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- NII Article ID
- 10018234165
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- NII Book ID
- AN10013276
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- Text Lang
- ja
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- Data Source
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- CiNii Articles