電子ビーム蒸着法により石英ガラス上に作製した GaSe の薄膜成長と光学的性質 Growth and Optical Property of GaSe Thin Film on Silica Glass Fabricated by Electron Beam Deposition

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Gallium selenide (GaSe) films, a layered semiconductor, were prepared on silica glass substrates by electron beam deposition at various substrate temperatures (<i>T</i><sub>s</sub>=R. T. ~500ºC). The structure, growth and optical properties of the GaSe films were studied. The unit layer of GaSe films was grown toward the two directions on silica. It is revealed that the GaSe films deposited at R. T. ~300ºC have amorphous structures, while those at 500ºC have a polycrystalline structure with their c-axis perpendicular to the substrate plane. Also it was found that the crystalline structure of the film grown at 400ºC is remarkably changed to become a c-axis parallel to the substrate plane and porous thin film. Furthermore, it was shown that the c-axis orientation of GaSe films could be controlled by the substrate temperature. The absorption edges of the GaSe films deposited at 500ºC showed a direct allowed transition with an optical gap of <i>E</i><sub>g</sub>=2.0eV, which was in good agreement with those measured in single crystal GaSe.<br>

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan

    表面技術 = The Journal of the Surface Finishing Society of Japan 57(9), 664-669, 2006-09-01

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018244620
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    8093776
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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