Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl2/BCl3/Ar Plasma

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著者

    • Wang Tzong-Bin Wang Tzong-Bin
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
    • Hsu Wei-Chou Hsu Wei-Chou
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
    • Che Yen-Wei [他] Che Yen-Wei
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
    • Chen Yeong-Jia
    • Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.

抄録

InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 800 °C- and 1000 °C-grown p-GaN cap layers were fabricated. Inductively coupled plasma (ICP) using Cl2/BCl3/Ar was used to etch the surface of the InGaN/GaN LEDs. Different compositions of the Cl2/BCl3/Ar gas system were used to reduce surface roughness after the plasma etching process, that results from the low-temperature (800 °C)-grown p-type GaN with a higher hole concentration. The maximum etching rate (${\sim}6000$ Å/min) was attained approximately 10% BCl3 in Cl2/BCl3/Ar plasma. Sputter desorption and surface morphology are significantly improved. Furthermore, surface oxidation is suppressed.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6800-6802, 2006-09-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018245197
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8055204
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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