Gettering of Ni from Ni–Metal Induced Lateral Crystallization Polycrystalline Silicon Films Using a Gettering Substrate
Access this Article
Search this Article
Ni–metal-induced lateral crystallization (NILC) of amorphous silicon ($\alpha$-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using $\alpha$-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.
- Jpn J Appl Phys
Jpn J Appl Phys 45(9A), 6803-6805, 2006-09-15
INSTITUTE OF PURE AND APPLIED PHYSICS