Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

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著者

    • Lee Kin kiong Lee Kin Kiong
    • Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7, Building A3, D-91058, Erlangen, Germany
    • Pensl Gerhard Pensl Gerhard
    • Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7, Building A3, D-91058, Erlangen, Germany
    • Ferro Gabriel
    • Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon 1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
    • Monteil Yves
    • Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon 1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France

抄録

The temperature- and frequency-dependent electrical properties of SiO2/3C–SiC/6H–SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C–SiC film is doped with an average concentration of $8.4\times 10^{16}$ cm-3. One nitrogen donor level and a shallow donor level were found. The measured interface state density near the conduction band edge of 3C–SiC is below $10^{11}$ cm-2 eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/n-type SiC consist of two different kinds of interface traps.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6823-6829, 2006-09-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

参考文献:  31件中 1-31件 を表示

  • <no title>

    PENSL G.

    Mater. Res. Soc. Symp. Proc. 640, H3.2, 2001

    被引用文献1件

  • <no title>

    CHUNG G. Y.

    Appl. Phys. Lett. 76, 1713, 2000

    被引用文献1件

  • <no title>

    MOGAB C. J.

    J. Appl. Phys. 45, 1075, 1974

    被引用文献1件

  • <no title>

    CAMPBELL R. B.

    J. Electrochem. Soc. 113, 825, 1996

    被引用文献1件

  • <no title>

    FERRO G.

    New J. Chem. 28, 889, 2004

    被引用文献1件

  • <no title>

    KERN W.

    RCA Rev. 31, 187, 1970

    被引用文献1件

  • <no title>

    CHEN A.-B.

    Phys. Status Solidi B 202, 81, 1997

    被引用文献1件

  • <no title>

    LOS A.

    Ph.D. dissertation, Mississippi State University, 2001

    被引用文献1件

  • <no title>

    NICOLLIAN E. H.

    MOS (Metal-Oxide-Semiconductor) Physics and Technology, 1982

    被引用文献1件

  • <no title>

    LAX M.

    Phys. Rev. 119, 1502, 1960

    被引用文献1件

  • <no title>

    SCHUBERT E. F.

    Doping in III-V Semiconductors, 1993

    被引用文献1件

  • <no title>

    MATSUURA H.

    J. Appl. Phys. 96, 7346, 2004

    被引用文献1件

  • <no title>

    MATSUURA H.

    Jpn. J. Appl. Phys. 39, 5069, 2000

    被引用文献1件

  • <no title>

    AFANAS'EV V. V.

    Phys. Rev. Lett. 78, 2437, 1997

    被引用文献1件

  • <no title>

    CIOBANU F.

    Mater. Sci. Forum 433-436, 551, 2003

    被引用文献1件

  • Significantly improved performance of MOSFET's in silicon carbide using the 15R-SiC polytype

    SCHORNER R.

    IEEE Electron Device Lett. 20(5), 241-243, 1999

    被引用文献8件

  • <no title>

    LEE K. K.

    IEEE Electron Device Lett. 24, 466, 2003

    被引用文献1件

  • <no title>

    NUTT S. R.

    Appl. Phys. Lett. 50, 203, 1987

    被引用文献2件

  • <no title>

    FURUMURA Y.

    J. Electrochem. Soc. 135, 1255, 1988

    被引用文献3件

  • <no title>

    KONG H. S.

    J. Mater. Res. 4, 204, 1989

    被引用文献2件

  • <no title>

    HENRY H. C.

    Phys. Rev. B 15, 989, 1977

    被引用文献3件

  • <no title>

    FREITAS J. A. Jr.

    Appl. Phys. Lett. 52, 1695, 1988

    被引用文献1件

  • <no title>

    SMITH S. R.

    J. Electron. Mater. 28, 190, 1999

    被引用文献1件

  • <no title>

    SUZUKI A.

    Appl. Phys. Lett. 49, 450, 1986

    被引用文献2件

  • <no title>

    SUZUKI A.

    Appl. Phys. Lett. 50, 1534, 1987

    DOI 被引用文献1件

  • <no title>

    SEGALL B.

    Appl. Phys. Lett. 49, 584, 1986

    被引用文献1件

  • <no title>

    SEGALL B.

    Appl. Phys. Lett. 50, 1533, 1987

    被引用文献1件

  • <no title>

    MOORE W. J.

    Solid State Commun. 93, 389, 1995

    被引用文献1件

  • Intrinsic SiC/SiO2 Interface States

    AFANASEV V. V.

    Physica Status Solidi A 162, 321-337, 1997

    被引用文献20件

  • <no title>

    JERNIGAN G. G.

    Appl. Phys. Lett. 74, 1448, 1999

    被引用文献1件

  • <no title>

    JERNIGAN G. G.

    Appl. Phys. Lett. 77, 1437, 2000

    被引用文献2件

各種コード

  • NII論文ID(NAID)
    10018245276
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8055268
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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