# Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

## 抄録

The temperature- and frequency-dependent electrical properties of SiO2/3C–SiC/6H–SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C–SiC film is doped with an average concentration of $8.4\times 10^{16}$ cm-3. One nitrogen donor level and a shallow donor level were found. The measured interface state density near the conduction band edge of 3C–SiC is below $10^{11}$ cm-2 eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/n-type SiC consist of two different kinds of interface traps.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6823-6829, 2006-09-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10018245276
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
ART
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
8055268
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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