Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

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著者

    • Lee Kin kiong Lee Kin Kiong
    • Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7, Building A3, D-91058, Erlangen, Germany
    • Pensl Gerhard Pensl Gerhard
    • Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7, Building A3, D-91058, Erlangen, Germany
    • Ferro Gabriel
    • Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon 1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
    • Monteil Yves
    • Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon 1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France

抄録

The temperature- and frequency-dependent electrical properties of SiO2/3C–SiC/6H–SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C–SiC film is doped with an average concentration of $8.4\times 10^{16}$ cm-3. One nitrogen donor level and a shallow donor level were found. The measured interface state density near the conduction band edge of 3C–SiC is below $10^{11}$ cm-2 eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/n-type SiC consist of two different kinds of interface traps.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6823-6829, 2006-09-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018245276
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8055268
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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