Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching

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The influence of gamma-radiation on the electrical characteristics of 6H–SiC p-channel metal–oxide–semiconductor field effect transistors (MOSFETs) containing step bunching is reported. The formation of step bunching perpendicular to the channel inhibited the current flow, whereas such an effect was not seen in devices with step bunching formed parallel to the channel. The effective channel mobility in the latter devices increases with gamma-radiation. This improvement of the hole mobility is attributed partially to the positively trapped charges screened the holes from approaching too close to the surface and partially to the effect of position of these charges, resulting in a reduction of scattering and capture of holes. No enhancement in the effective channel mobility was observed for devices with no step bunching or with root mean square roughness in the channel region less than 4 nm. Further irradiation leads to a decrease in the effective channel mobility due to both the formation of latent interface traps and electrostatics repulsion of holes.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(9A), 6830-6836, 2006-09-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018245308
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8055293
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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